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0 · jfet 150 specs
1 · jfe 150 ultra low noise
2 · interfet j202
3 · 2n5457 jfet
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Features. InterFET N0032H Geometry. Low Noise: 7 nV/√Hz Typical. Low Ciss: 6pF Typical. .
The JFE150 is an ultra-low noise JFET designed to create low-noise gain stages for very high .
jfet 150 specs
jfe 150 ultra low noise
Features. InterFET N0016SH Geometry. Low Noise: 5 nV/√Hz Typical. Low Ciss: 4pF Typical. . We recently launched the JFE150, a discrete N-channel JFET targeting low . We recently launched the JFE150, a discrete N-channel JFET targeting low .The -25V InterFET 2N3819 JFET is targeted for low noise switching and audio amplifier .
The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the .Features. InterFET N0032H Geometry. Low Noise: 7 nV/√Hz Typical. Low Ciss: 6pF Typical. RoHS Compliant. SMT, TH, and Bare Die Package options.The JFE150 is an ultra-low noise JFET designed to create low-noise gain stages for very high output impedance sensors or microphones. Advanced processing technology gives the JFE150 extremely low-noise performance, a high gm/CISS ratio, and ultra-low gate-current performance.Features. InterFET N0016SH Geometry. Low Noise: 5 nV/√Hz Typical. Low Ciss: 4pF Typical. RoHS Compliant. SMT, TH, and Bare Die Package options.
We recently launched the JFE150, a discrete N-channel JFET targeting low noise applications. JFE150 data sheet. Product information and support. Some key specs of the JFE150: 0.8 nV/rtHz broadband noise at an IDS of 5mA. 10pA of gate current (max), for lower drain-to-source voltages. Gate current takes off above about 5V VDS. We recently launched the JFE150, a discrete N-channel JFET targeting low noise applications: JFE150 data sheet, product information and support | TI.com. Some key specs of the JFE150: 1. 0.8 nV/rtHz broadband noise at an IDS of 5mA. 2. 10pA of gate current (max), for lower drain-to-source voltages.The -25V InterFET 2N3819 JFET is targeted for low noise switching and audio amplifier applications. Gate leakages are typically less than 10pA at room temperatures. Source.
The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 μA to 20 mA.The JFE2140 is a Burr-BrownTM Audio, matched-pair discrete JFET built using Texas Instruments' modern, high-performance, analog bipolar process. The JFE2140 features performance not previously available in older discrete JFET technologies.LOW NOISE LOW LEAKAGE SINGLE N-CHANNEL JFET AMPLIFIER. FEATURES. ULTRA LOW NOISE. en = 3nV/√Hz. LOW INPUT CAPACITANCE. CISS = 4pF. ABSOLUTE MAXIMUM RATINGS1. @ 25 °C (unless otherwise stated)
The LS844 Series is the industry’s lowest input capacitance and low-noise monolithic dual N-Channel JFET. Low input capacitance substantially reduces intermodulation distortion. In addition, these dual JFETs feature tight offset voltage and low drift over temperature range, and are targeted for use in a wide range of precision instrumentation .Features. InterFET N0032H Geometry. Low Noise: 7 nV/√Hz Typical. Low Ciss: 6pF Typical. RoHS Compliant. SMT, TH, and Bare Die Package options.The JFE150 is an ultra-low noise JFET designed to create low-noise gain stages for very high output impedance sensors or microphones. Advanced processing technology gives the JFE150 extremely low-noise performance, a high gm/CISS ratio, and ultra-low gate-current performance.Features. InterFET N0016SH Geometry. Low Noise: 5 nV/√Hz Typical. Low Ciss: 4pF Typical. RoHS Compliant. SMT, TH, and Bare Die Package options.
interfet j202
We recently launched the JFE150, a discrete N-channel JFET targeting low noise applications. JFE150 data sheet. Product information and support. Some key specs of the JFE150: 0.8 nV/rtHz broadband noise at an IDS of 5mA. 10pA of gate current (max), for lower drain-to-source voltages. Gate current takes off above about 5V VDS. We recently launched the JFE150, a discrete N-channel JFET targeting low noise applications: JFE150 data sheet, product information and support | TI.com. Some key specs of the JFE150: 1. 0.8 nV/rtHz broadband noise at an IDS of 5mA. 2. 10pA of gate current (max), for lower drain-to-source voltages.The -25V InterFET 2N3819 JFET is targeted for low noise switching and audio amplifier applications. Gate leakages are typically less than 10pA at room temperatures. Source.The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 μA to 20 mA.
The JFE2140 is a Burr-BrownTM Audio, matched-pair discrete JFET built using Texas Instruments' modern, high-performance, analog bipolar process. The JFE2140 features performance not previously available in older discrete JFET technologies.LOW NOISE LOW LEAKAGE SINGLE N-CHANNEL JFET AMPLIFIER. FEATURES. ULTRA LOW NOISE. en = 3nV/√Hz. LOW INPUT CAPACITANCE. CISS = 4pF. ABSOLUTE MAXIMUM RATINGS1. @ 25 °C (unless otherwise stated)
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jfet chanel n low noise to-236ab|interfet j202
